Datasheet4U Logo Datasheet4U.com

CEA6861 - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D S D G SOT-89 G S.

📥 Download Datasheet

Datasheet preview – CEA6861

Datasheet Details

Part number CEA6861
Manufacturer CET
File Size 255.74 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEA6861 Datasheet
Additional preview pages of the CEA6861 datasheet.

📁 Similar Datasheet

  • CEA3055L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEAS03xV0-G - Bidirectional ESD / Transient Suppressor (Comchip Technology)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D S D G SOT-89 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -60 Units V V A A W C ±20 -2.4 -10 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W Details are subject to change without notice . 1 Rev 1. 2006.Sep http://www.cetsemi.
Published: |