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CEP07N65A/CEB07N65A CEF07N65A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP07N65A CEB07N65A CEF07N65A
VDSS 650V 650V 650V
RDS(ON) 1.45Ω 1.45Ω 1.45Ω
ID @VGS 7A 10V 7A 10V 7A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G D S CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID
IDM e
PD
650
±30
7 5 28 150
1
7 5d 28 d 48
0.
CEB07N65A Datasheet
