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CEP41A2/CEB41A2
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 40A, RDS(ON) =20mΩ @VGS = 4.5V. RDS(ON) =30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20
Units V V A A W W/ C C
±12
40 120 60 0.
CEB41A2 Datasheet
