CEB830G
CEB830G is N-Channel MOSFET manufactured by CET.
FEATURES
Type CEP830G CEB830G
VDSS 500V 500V
CEF830G
500V
RDS(ON) 1.5Ω 1.5Ω 1.5Ω
ID @VGS 5A 10V 5A 10V 5A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
D S CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS VGS ID IDM f
±30
5 20
5e 20 e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
83 42 PD 0.66 0.33
Single Pulsed Avalanche Energy g
EAS 39.2
Single Pulsed Avalanche Current g Operating and Store Temperature Range
IAS TJ,Tstg
2.8 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC...
