• Part: CEB83A3G
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 373.79 KB
Download CEB83A3G Datasheet PDF
CET
CEB83A3G
CEB83A3G is N-Channel MOSFET manufactured by CET.
FEATURES 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 102 72 408 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 83 0.55 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 151 55 -55 to 175 Units V V A A A W W/ C m J A Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . Symbol RθJC RθJA Limit 1.8 62.5 Units C/W C/W Rev 2. 2011.May http://.cet-mos. CEP83A3G/CEB83A3G Electrical Characteristics Tc = 25 C unless otherwise...