CEB83A3G
CEB83A3G is N-Channel MOSFET manufactured by CET.
FEATURES
30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM
102 72 408
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
83 0.55
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
151 55 -55 to 175
Units V V A A A W
W/ C m J A
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol RθJC RθJA
Limit 1.8 62.5
Units C/W C/W
Rev 2. 2011.May http://.cet-mos.
CEP83A3G/CEB83A3G
Electrical Characteristics Tc = 25 C unless otherwise...