Datasheet4U Logo Datasheet4U.com

CEB85A3 - N-Channel MOSFET

Datasheet Summary

Features

  • 25V, 90A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-263 & TO-220 package. D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

📥 Download Datasheet

Datasheet preview – CEB85A3

Datasheet Details

Part number CEB85A3
Manufacturer CET
File Size 313.83 KB
Description N-Channel MOSFET
Datasheet download datasheet CEB85A3 Datasheet
Additional preview pages of the CEB85A3 datasheet.

📁 Similar Datasheet

  • CEB8030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEB8030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEB803AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEB8060 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEB8060L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEB8060LR - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEB8060R - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEB1012 - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
  • CEB1012L - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
  • CEB16N10L - N-Channel MOSFET (VBsemi)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CEP85A3/CEB85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 90A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-263 & TO-220 package. D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 25 ±20 90 360 89 0.
Published: |