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CEB85N75V - N-Channel MOSFET

Datasheet Summary

Features

  • 75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

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Datasheet Details

Part number CEB85N75V
Manufacturer CET
File Size 431.13 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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CEP85N75V/CEB85N75V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 75 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 85 59 340 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 200 1.
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