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CED06N7/CEU06N7
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
700V, 5A, RDS(ON) = 2Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 700
VGS ±30
Drain Current-Continuous Drain Current-Pulsed a
ID 5 IDM 20
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
107 0.
CED06N7 Datasheet
