Datasheet4U Logo Datasheet4U.com

CED75A3 - N-Channel MOSFET

Datasheet Summary

Features

  • 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

📥 Download Datasheet

Datasheet preview – CED75A3

Datasheet Details

Part number CED75A3
Manufacturer CET
File Size 108.72 KB
Description N-Channel MOSFET
Datasheet download datasheet CED75A3 Datasheet
Additional preview pages of the CED75A3 datasheet.

📁 Similar Datasheet

  • CED730G - N-Channel MOSFET (Chino-Excel Technology)
  • CED73A3G - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N65 - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N65A - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N6G - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N7 - N-Channel MOSFET (Chino-Excel Technology)
  • CED02N6G - N-Channel MOSFET (Chino-Excel Technology)
  • CED02N7G - N-Channel MOSFET (Chino-Excel Technology)
  • CED04N7G - N-Channel MOSFET (Chino-Excel Technology)
  • CED05P03 - P-Channel MOSFET (Chino-Excel Technology)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CED75A3/CEU75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 25 Units V V A A W W/ C C ±20 60 200 56 0.
Published: |