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CED95P04/CEU95P04
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
Drain Current-Pulsed a
@ TC = 100 C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS -40
VGS ±20
-77 ID -48
IDM -308 73.
CED95P04 Datasheet
