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CED9926 - N-Channel MOSFET

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Features

  • 20V, 26A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CED9926
Manufacturer CET
File Size 83.15 KB
Description N-Channel MOSFET
Datasheet download datasheet CED9926 Datasheet
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Full PDF Text Transcription

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CED9926/CEU9926 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 26A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 20 ±12 26 78 38 0.
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