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CEFF634 - N-Channel Field Effect Transistor

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Features

  • 250V , 6A , RDS(ON)=450mΩ @VGS=10V. D 6 Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole G G D S S TO-220F.

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Datasheet Details

Part number CEFF634
Manufacturer CET
File Size 69.40 KB
Description N-Channel Field Effect Transistor
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Full PDF Text Transcription

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CEFF634 Nov. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 250V , 6A , RDS(ON)=450mΩ @VGS=10V. D 6 Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID -Pulsed IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range PD TJ, TSTG Limit 250 30 6 24 6 38 0.3 -50 to 150 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC 3.
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