Datasheet Summary
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Single N-Channel Enhancement Mode Field Effect Transistor Features
100V, 3.4A, RDS(ON) = 120mΩ @VGS = 10V.
PRELIMINARY
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
SO-8 1
1 S 2 S 3 S 4...