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CEM11C2 - Dual Enhancement Mode Field Effect Transistor

Key Features

  • 30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. -20V , -4.3A , RDS(ON)=90m Ω @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. SO-8 1 1 2 3 4 D1 8 D1 7 D2 6 D2 5 S1 G1 S2 G2.

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Datasheet Details

Part number CEM11C2
Manufacturer CET
File Size 78.16 KB
Description Dual Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM11C2 Datasheet

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www.DataSheet4U.net CEM11C2 Jul. 2002 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) 5 FEATURES 30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. -20V , -4.3A , RDS(ON)=90m Ω @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. SO-8 1 1 2 3 4 D1 8 D1 7 D2 6 D2 5 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation a Operating Junction and Storage Temperature Range a a Symbol VDS VGS ID IDM IS PD TJ, TSTG N-Channel P-Channel 30 -20 Unit V V A A A W C Ć20 Ć7 Ć 30 2.3 2.