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CEM1515P
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-150V, -2.3A, RDS(ON) = 240mΩ @VGS = -10V. RDS(ON) = 280mΩ @VGS = -6V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -150
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -2.3 IDM -9.2
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units V V A A W C
Units C/W
Details are subject to change without notice .
CEM1515P Datasheet
