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CEM0415 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • 150V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 6V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

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Datasheet Details

Part number CEM0415
Manufacturer CET
File Size 398.98 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM0415 Datasheet

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CEM0415 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 6V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage(Typ) Gate-Source Voltage VDS 150 VGS ±30 Drain Current-Continuous ID 4 Drain Current-Pulsed a IDM 16 Maximum Power Dissipation PD 2.