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CEM2082
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
D D 7 D 6 D 5
5
Lead free product is acquired. Surface mount Package.
8
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C
±12
11 40 2.
CEM2082 Datasheet
