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CEM2082 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acquired. Surface mount Package. 8 SO-8 1 1 S 2 S 3 S 4 G.

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Datasheet Details

Part number CEM2082
Manufacturer CET
File Size 107.81 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM2082 Datasheet

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CEM2082 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acquired. Surface mount Package. 8 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 11 40 2.