Datasheet Summary
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
Features
-20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS pliant. Surface mount Package.
DD D D 8 7 65
SO-8
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