Datasheet Summary
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
Features
20V, 7.6A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V.
-20V, -5.9A, RDS(ON) = 35mΩ @VGS = -4.5V. RDS(ON) = 50mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
D1 D1 D2 D2 87 65
1234 S1 G1 S2...