Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
Features
30V ,7.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS pliant. Surface mount Package.
DD D D 8 7 65
SO-8
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