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CEM3254L - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • 30V, 8.0A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

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Datasheet Details

Part number CEM3254L
Manufacturer CET
File Size 405.38 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM3254L Datasheet

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CEM3254L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 8.0A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±12 ID 8.0 IDM 32.0 Maximum Power Dissipation PD 2.