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CEM4401 - P-Channel MOSFET

Datasheet Summary

Features

  • -40V, -5.4A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

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Datasheet Details

Part number CEM4401
Manufacturer CET
File Size 83.02 KB
Description P-Channel MOSFET
Datasheet download datasheet CEM4401 Datasheet
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Full PDF Text Transcription

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CEM4401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -5.4A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -40 VGS ±20 ID -5.4 IDM -20 Maximum Power Dissipation PD 2.
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