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CEM4450
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 7.5A, RDS(ON) = 24mΩ @VGS = 10V. RDS(ON) = 39mΩ @VGS = 6V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 7.5 IDM 30
Maximum Power Dissipation
PD 2.
CEM4450 Datasheet
