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CEM7350 - Dual Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 7 D2 6 D2 5 Lead free product is acquired. Surface mount Package. 8 SO-8 1 1 S1 2 G1 3 S2 4 G2.

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Datasheet Details

Part number CEM7350
Manufacturer CET
File Size 184.18 KB
Description Dual Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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CEM7350 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 7 D2 6 D2 5 Lead free product is acquired. Surface mount Package. 8 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 100 P-Channel -100 Units V V A A W C ±20 2.6 10 2.0 -55 to 150 ±20 -2.0 -8.
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