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CEM7350L - Dual Enhancement Mode Field Effect Transistor

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Features

  • 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 5V. RDS(ON) = 180mΩ @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2 87 65 SO-8 1 1234 S1 G1 S2 G2.

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Datasheet Details

Part number CEM7350L
Manufacturer CET
File Size 614.13 KB
Description Dual Enhancement Mode Field Effect Transistor
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CEM7350L Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 5V. RDS(ON) = 180mΩ @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2 87 65 SO-8 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 100 VGS ±20 ID 2.6 IDM 10.4 P-Channel -100 ±20 -2.0 -8.0 Maximum Power Dissipation PD 2.
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