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CEM7808 - MOSFET

Datasheet Summary

Features

  • 30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. P1S P2S P1G P2G N1D P1D N2D P2D N1G N2G P1G 8 N1S N2S P1S N2D P2S P2D 76 P2G 5 SO-8 1 1234 N1G N1D P1D N1S N2S N2G.

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Datasheet Details

Part number CEM7808
Manufacturer CET
File Size 556.58 KB
Description MOSFET
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CEM7808 Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) PRELIMINARY FEATURES 30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. P1S P2S P1G P2G N1D P1D N2D P2D N1G N2G P1G 8 N1S N2S P1S N2D P2S P2D 76 P2G 5 SO-8 1 1234 N1G N1D P1D N1S N2S N2G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage VDS 30 -30 VGS ±20 ±20 Drain Current-Continuous ID 6.2 -4.8 Drain Current-Pulsed a IDM 24.8 -19.2 Maximum Power Dissipation PD 2.
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