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CEM8968 - Dual Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5.

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Datasheet Details

Part number CEM8968
Manufacturer CET
File Size 529.19 KB
Description Dual Enhancement Mode Field Effect Transistor
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CEM8968 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 7 IDM 28 P-Channel -30 ±20 -6.2 -25 Maximum Power Dissipation PD 2.
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