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CEP03N8/CEB03N8 CEF03N8
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP03N8 CEB03N8 CEF03N8
VDSS 800V 800V
800V
RDS(ON) 4.8Ω 4.8Ω
4.8Ω
ID @VGS 3A 10V 3A 10V 3A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS 800
VGS ±30
ID
3 2
IDM e
12
125 PD
0.8
TO-220F
3d 2d 12 d 47 0.
CEP03N8 Datasheet
