Datasheet4U Logo Datasheet4U.com

CEP05N65 - N-Channel MOSFET

Key Features

  • Type CEP05N65 CEB05N65 CEF05N65 VDSS 650V 650V 650V RDS(ON) 2.4Ω 2.4Ω 2.4Ω ID 4.5A 4.5A 4.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

📥 Download Datasheet

Datasheet Details

Part number CEP05N65
Manufacturer CET
File Size 385.59 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP05N65 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEP05P03 P-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEP02N6 N-channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEP04N6 N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEP06N5 N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEP1012 N-Channel Enhancement Mode Field Transistor Chino-Excel Technology

Other Datasheets by CET

Part Number Description
CEP01N6 N-Channel MOSFET
CEP01N65 N-Channel MOSFET
CEP01N6G N-Channel MOSFET
CEP02N65A N-Channel Enhancement Mode Field Effect Transistor
CEP02N65D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEP05N65/CEB05N65 CEF05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP05N65 CEB05N65 CEF05N65 VDSS 650V 650V 650V RDS(ON) 2.4Ω 2.4Ω 2.4Ω ID 4.5A 4.5A 4.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 650 VGS ±30 ID 4.5 2.9 IDM 18 84 PD 0.67 TO-220F 4.5 d 2.9 d 18 d 40 0.