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CEP05N65/CEB05N65 CEF05N65
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP05N65 CEB05N65 CEF05N65
VDSS 650V 650V
650V
RDS(ON) 2.4Ω 2.4Ω
2.4Ω
ID 4.5A 4.5A 4.5A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS 650
VGS ±30
ID
4.5 2.9
IDM 18
84 PD
0.67
TO-220F
4.5 d 2.9 d 18 d 40 0.
CEP05N65 Datasheet
