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CEP08N6A - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • Type CEP08N6A CEB08N6A CEF08N6A VDSS 600V 600V 600V RDS(ON) 1.25Ω 1.25Ω 1.25Ω ID 7.5A 7.5A 7.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP08N6A
Manufacturer CET
File Size 371.89 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEP08N6A Datasheet
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Full PDF Text Transcription

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CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP08N6A CEB08N6A CEF08N6A VDSS 600V 600V 600V RDS(ON) 1.25Ω 1.25Ω 1.25Ω ID 7.5A 7.5A 7.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 600 ±30 7.5 5.2 30 150 1 7.5 5.2 d 30 d 48 0.
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