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CEP09N7A/CEB09N7A CEF09N7A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP09N7A CEB09N7A CEF09N7A VDSS 700V 700V 700V RDS(ON) 1.2Ω 1.2Ω 1.2Ω ID 8A 8A 8A e @VGS 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg
f
TO-220F
Units V V
700
±30
8 30 167 1.33 -55 to 150 8
e e
A A W W/ C C
30 50 0.
CEP09N7A Datasheet
