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CEP12N5 - N-Channel MOSFET

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Features

  • Type CEP12N5 CEB12N5 CEF12N5 VDSS 500V 500V 500V RDS(ON) 0.54Ω 0.54Ω 0.54Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP12N5
Manufacturer CET
File Size 378.49 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP12N5 Datasheet
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Full PDF Text Transcription

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CEP12N5/CEB12N5 CEF12N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N5 CEB12N5 CEF12N5 VDSS 500V 500V 500V RDS(ON) 0.54Ω 0.54Ω 0.54Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 500 ±30 12 48 166 1.3 12 d 48d 50 0.
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