CET CEP12N65
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | CEP12N65 |
|---|---|
| Datasheet | CEP12N65 Download |
| Manufacturer |  CET |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650V 650V RDS(ON) 0.73Ω 0.73Ω 0.73Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F SABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM e 650 ±30 12 48 12 d 48d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 250 60 PD 1.67 0.4 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS 607 IAS 9 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.6 62.5 2.5 65 Units V V A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now .
