Datasheet Summary
CEP10N4/CEB10N4 CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor Features
Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.7Ω 0.7Ω 0.7Ω 0.7Ω ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
S CEB SERIES TO-263(DD-PAK)
CEI SERIES TO-262(I2-PAK)
CEP SERIES TO-220
CEF SERIES...