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CEP1165 - N-Channel MOSFET

Key Features

  • Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.9Ω 0.9Ω 0.9Ω ID 10A 10A 10A e @VGS 10V 10V 10V CEP1165/CEB1165 CEF1165 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G S CEB SERIES TO-263(DD-PAK) G G D S G CEP SERIES TO-220 D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP1165
Manufacturer CET
File Size 383.66 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP1165 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.9Ω 0.9Ω 0.9Ω ID 10A 10A 10A e @VGS 10V 10V 10V CEP1165/CEB1165 CEF1165 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G S CEB SERIES TO-263(DD-PAK) G G D S G CEP SERIES TO-220 D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg f TO-220F Units V V 600 ±30 10 40 167 1.33 -55 to 150 10 40 50 0.