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CEP1185/CEB1185
CEF1185
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP1185 CEB1185 CEF1185
VDSS 800V 800V
800V
RDS(ON) 2.9 Ω 2.9 Ω
2.9 Ω
ID 4.4A 4.4A 4.4A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS 800
VGS ±30
ID
4.4 2.8
IDM e
17.6
139 PD 1.1
TO-220F
4.4 d 2.8 d 17.6 d 45 0.
CEP1185 Datasheet
