Datasheet4U Logo Datasheet4U.com

CEP110P03 - P-Channel MOSFET

Datasheet Summary

Features

  • -30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.5mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

📥 Download Datasheet

Datasheet preview – CEP110P03

Datasheet Details

Part number CEP110P03
Manufacturer CET
File Size 397.01 KB
Description P-Channel MOSFET
Datasheet download datasheet CEP110P03 Datasheet
Additional preview pages of the CEP110P03 datasheet.

📁 Similar Datasheet

  • CEP1110 - Pulse transformer (Sumida)
  • CEP1112 - Pulse transformer (Sumida)
  • CEP1012 - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
  • CEP1012L - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
  • CEP125 - Power Inductors (Sumida)
  • CEP1311C - ADSL Transformer (Sumida)
  • CEP1311E - ADSL Transformer (Sumida)
  • CEP1311F - Transformer (Sumida)
  • CEP18N5 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • CEP02N6 - N-channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CEP110P03/CEB110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.5mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS -30 VGS ±20 -105.
Published: |