Datasheet Summary
CEP13N10/CEB13N10
N-Channel Enhancement Mode Field Effect Transistor Features
100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
S CEB SERIES TO-263(DD-PAK) G
CEP SERIES...