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CEP13N10 - N-Channel MOSFET

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Features

  • 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S.

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Datasheet Details

Part number CEP13N10
Manufacturer CET
File Size 100.89 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP13N10 Datasheet
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Full PDF Text Transcription

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CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 12.8 50 65 0.
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