Type CEP13N5 CEB13N5 CEF13N5
VDSS 500V 500V
500V
RDS(ON) 0.48Ω 0.48Ω
0.48Ω
ID 13A 13A 13A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CEP13N5/CEB13N5 CEF13N5
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP13N5 CEB13N5 CEF13N5
VDSS 500V 500V
500V
RDS(ON) 0.48Ω 0.48Ω
0.48Ω
ID 13A 13A 13A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.