CEP62A3 Datasheet PDF

FEATURES

30V , 60A , RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 4 D G G D S G S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S

ABSOLUTE MAXIMUM RATINGS

(Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C Ć20 60 180 60 68 0.45 -55 to 175 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 4-177 2.2 62.5 C/W C/W CEP62A3/CEB62A3

ELECTRICAL CHARACTERISTICS

(TC=25 C unless otherwise noted) 4 Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON...