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N-Channel Enhancement Mode Field Effect Transistor FEATURES
25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-263 & TO-220 package.
CEP75A3/CEB75A3
D
G
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 25
Units V V A A W W/ C C
±20
69 276 68 0.
CEP75A3 Datasheet
