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CES2301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package.
D
DS G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -20
VGS ±8
Drain Current-Continuous Drain Current-Pulsed a
ID -2.8 IDM -10
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 4. 2010.Aug. http://www.
CES2301 Datasheet
