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CEU13N07 - N-Channel MOSFET

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Features

  • 70V, 11A, RDS(ON) = 127mΩ @VGS = 10V. RDS(ON) = 153mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

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Datasheet Details

Part number CEU13N07
Manufacturer CET
File Size 168.13 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU13N07 Datasheet
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Full PDF Text Transcription

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CED13N07/CEU13N07 N-Channel Enhancement Mode Field Effect Transistor FEATURES 70V, 11A, RDS(ON) = 127mΩ @VGS = 10V. RDS(ON) = 153mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 70 Units V V A A W W/ C mJ A C ±20 11 44 28 0.
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