Datasheet4U Logo Datasheet4U.com

CEU3700 - N-Channel MOSFET

Datasheet Summary

Features

  • 30V, 12A, RDS(ON) = 95mΩ @VGS = 10V. RDS(ON) = 130mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

📥 Download Datasheet

Datasheet preview – CEU3700

Datasheet Details

Part number CEU3700
Manufacturer CET
File Size 207.32 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU3700 Datasheet
Additional preview pages of the CEU3700 datasheet.

📁 Similar Datasheet

  • CEU301J - Disc Ceramic Capacitors (Mallory)
  • CEU3055L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEU3055L3 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEU3055L5 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEU3060 - N-Channel MOSFET (Chino-Excel Technology)
  • CEU331J - Disc Ceramic Capacitors (Mallory)
  • CEU391J - Disc Ceramic Capacitors (Mallory)
  • CEU01N65 - N-Channel MOSFET (Chino-Excel Technology)
  • CEU01N65A - N-Channel MOSFET (Chino-Excel Technology)
  • CEU01N6G - N-Channel MOSFET (Chino-Excel Technology)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CED3700/CEU3700 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS(ON) = 95mΩ @VGS = 10V. RDS(ON) = 130mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 12 48 31 0.
Published: |