S9015W
S9015W is PNP Transistor manufactured by CHINA BASE.
FEATURES
- Small Surface Mount Package
- High DC Current Gain
SOT- 323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-45
VEBO Emitter-Base Voltage
-5
IC Collector Current
-100
PC Collector Power Dissipation
RΘJA Thermal Resistance From Junction To Ambient
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V m A m W ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=-100µA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
IEBO VEB=-5V, IC=0
DC current gain h FE VCE=-5V, IC=-1m...
