CML MwT-5F
The MwT-5F is a dual gate GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range. MwT-5F is equally effective for either wideband (e.g.MwT-5F Specifications
- Max Operating Temp : 175°C
Source:
Octopart
| Part No. | MwT-5F |
|---|---|
| Datasheet | MwT-5F Download |
| Manufacturer |  CML |
| Description | Dual Gate GaAs FET |
| Buy | Stock & Price |
FEATURES
:● 21 dBm P1dB at 12 GHz
● 19 dB Small Signal Gain at 12 GHz
● 0.25 Micron Refractory Metal/Gold Gate
● Excellent for High Gain and High Linear Amplifier
APPLICATIONS
● Ideal for Commercial, Military, Hi-Rel SpaceAPPLICATIONS
● 300 Micron Dual Gate Width● Choice of Chip and One Package Type Chip Dimensions: 415 x 260 microns Chip Thickness: 100 microns
DESCRIPTION
: 2 to 26 GHz) or narrow-band applications. All chips are passivated with SiN (Silicon Nitride). RF Specifications:● at Ta= 25° C DC Specifications:
● at Ta= 25 °C 1 November 2023 MwT-5F 26 GHz High Gain, Dual Gate GaAs FET 2 November 2023 MwT-5F 26 GHz High Gain, Dual Gate GaAs FET 3 November 2023 MwT-5F 26 GHz High Gain, Dual Gate GaAs FET S-PARAMETER Vds=6V, Ids= 0.7 x Idss Freq. S11 S21 GHz dB Ang (°) dB Ang (°) 1 -0.586 -10.932 11.963 168.981 2 -0.665 -21.359 11.850 158.721 3 -0.788 -31.452 11.664 148.752 4 -0.952 -41.584 11.438 138.778 5 -1.126 -50.186 11.077 129.326 6 -1.294 -59.278 10.676 120.403 7 -1.629 -...
