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MwT-5F - Dual Gate GaAs FET

Description

The MwT-5F is a dual gate GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range.

MwT-5F is equally effective for either wideband (e.g.

Features

  • 21 dBm P1dB at 12 GHz.
  • 19 dB Small Signal Gain at 12 GHz.
  • 0.25 Micron Refractory Metal/Gold Gate.
  • Excellent for High Gain and High Linear Amplifier.

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Datasheet preview – MwT-5F

Datasheet Details

Part number MwT-5F
Manufacturer CML
File Size 880.04 KB
Description Dual Gate GaAs FET
Datasheet download datasheet MwT-5F Datasheet
Additional preview pages of the MwT-5F datasheet.

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Full PDF Text Transcription

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MwT-5F 26 GHz High Gain, Dual Gate GaAs FET Features: • 21 dBm P1dB at 12 GHz • 19 dB Small Signal Gain at 12 GHz • 0.25 Micron Refractory Metal/Gold Gate • Excellent for High Gain and High Linear Amplifier Applications • Ideal for Commercial, Military, Hi-Rel Space Applications • 300 Micron Dual Gate Width • Choice of Chip and One Package Type Chip Dimensions: 415 x 260 microns Chip Thickness: 100 microns Description: The MwT-5F is a dual gate GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range. MwT-5F is equally effective for either wideband (e.g. 2 to 26 GHz) or narrow-band applications.
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