MwT-5F
Features
:
- 21 d Bm P1d B at 12 GHz
- 19 d B Small Signal Gain at 12 GHz
- 0.25 Micron Refractory Metal/Gold Gate
- Excellent for High Gain and High Linear
Amplifier Applications
- Ideal for mercial, Military, Hi-Rel Space
Applications
- 300 Micron Dual Gate Width
- Choice of Chip and One Package Type
Chip Dimensions: 415 x 260 microns Chip Thickness: 100 microns
Description
:
The Mw T-5F is a dual gate Ga As MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range. Mw T-5F is equally effective for either wideband (e.g. 2 to 26 GHz) or narrow-band applications. All chips are passivated with Si N (Silicon Nitride).
RF Specifications:
- at Ta= 25° C
DC Specifications:
- at Ta= 25 °C
.cmlmicro.
November 2023
Mw T-5F
26 GHz High Gain, Dual Gate Ga As FET
.cmlmicro.
November 2023
Mw T-5F
26 GHz High Gain, Dual Gate Ga As FET
.cmlmicro.
No...
