CML MwT-11F
The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm. The device has very good linearity and power added efficiency.| Part No. | MwT-11F |
|---|---|
| Datasheet | MwT-11F Download |
| Manufacturer |  CML |
| Description | High Linearity GaAs FET |
| Buy | Stock & Price |
FEATURES
:● 32 dBm Output Power at 8 GHz
● 9 dB Typical Small Signal Gain at 8 GHz
● 0.25 x 2400 Micron Refractory Metal/Gold Gate
● Excellent for Linear High Power and High Power Added Efficiency
APPLICATIONS
● Ideal for Commercial, Military, Hi-Rel SpaceAPPLICATIONS
● Choice of Chip and One Package TypeDESCRIPTION
: Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns All chips are passivated with SiN (Silicon Nitride). RF Specifications:● at Ta= 25°C DC Specifications:
● at Ta= 25 °C 1 November 2023 MwT-11F High Power, High Linearity GaAs FET 2 November 2023 MwT-11F High Power, High Linearity GaAs FET
MAXIMUM RATINGS
AT Ta = 25 °C Notes: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal. 2. Exceeding any one of these limits may cause permanent damage. 3 November 2023 MwT-11F High Power, High Linearity GaAs FET Freq. GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10...
