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MwT-11F High Power, High Linearity GaAs FET
Features:
• 32 dBm Output Power at 8 GHz • 9 dB Typical Small Signal Gain at 8 GHz • 0.25 x 2400 Micron Refractory Metal/Gold Gate • Excellent for Linear High Power and High
Power Added Efficiency Applications
• Ideal for Commercial, Military, Hi-Rel Space
Applications
• Choice of Chip and One Package Type
Description:
Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns
The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm. The device has very good linearity and power added efficiency. All chips are passivated with SiN (Silicon Nitride).
RF Specifications: • at Ta= 25°C
DC Specifications: • at Ta= 25 °C
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MwT-11F Datasheet
