MwT-11F
MwT-11F is High Linearity GaAs FET manufactured by CML.
Features
:
- 32 d Bm Output Power at 8 GHz
- 9 d B Typical Small Signal Gain at 8 GHz
- 0.25 x 2400 Micron Refractory Metal/Gold Gate
- Excellent for Linear High Power and High
Power Added Efficiency Applications
- Ideal for mercial, Military, Hi-Rel Space
Applications
- Choice of Chip and One Package Type
Description
:
Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns
The Mw T-11F is Ga As MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 d Bm. The device has very good linearity and power added efficiency. All chips are passivated with Si N (Silicon Nitride).
RF Specifications:
- at Ta= 25°C
DC Specifications:
- at Ta= 25 °C
.cmlmicro.
November 2023
Mw T-11F
High Power, High Linearity Ga As FET
.cmlmicro.
November 2023
Mw T-11F
High Power, High Linearity Ga As FET
MAXIMUM RATINGS AT Ta = 25 °C
Notes:
1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal. 2. Exceeding any one of these limits may cause permanent damage.
.cmlmicro.
November 2023
Mw T-11F
High Power, High Linearity Ga As FET
Freq.
GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0
S11 d B
Ang...
