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MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT
Features:
• 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical PAE at 18 GHz • 0.25 x 250 Micron Refractory Metal/Gold Gate • Excellent for High Gain, and High Power Added
Efficiency
• Ideal for Commercial, Military, Hi-Rel Space
Applications
Description:
Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns
The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications.
MwT-PH7F Datasheet
