MwT-PH7F Datasheet | CML

Features : - 24.5 d Bm of Power at 18 GHz - 15 d B typical Small Signal Gain at 18 GHz - 45% typical PAE at 18 GHz - 0.25 x 250 Micron Refractory Metal/Gold Gate - Excellent for High Gain, and High Power Added Efficiency - Ideal for mercial, Military, Hi-Rel Space Applications Description : Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns The Mw T-PH7F is a Al Ga As/In Ga As p HEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability. Electrical Specifications: at Ta= 25 °C DC Specifications: at Ta= 25 °C .cmlmicro. November 2022 Mw T-PH7F 28 GHz Medium Power Al Ga As/In Ga As p HEMT .cmlmicro. November 2022 Mw T-PH7F DUAL BIAS Mw T-PH7F 28 GHz Medium Power Al Ga As/In Ga As p HEMT Mw T-PH7F SELF BIAS Chip and 71 Pkg 70 and 73 Pkg Absolute Maximum Rating Notes: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal. 2. Exceeding any one of these limits may cause permanent damage. .cmlmicro. November 2022 S-Parameters Mw T-PH7F 28 GHz Medium Power Al Ga As/In Ga As p HEMT Available...