CML MwT-PH7F
The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range. The device is equally effective for either wideband (e.g. The chip is produced using reliable metal systems and passivated to insure excellent reliability.| Part No. | MwT-PH7F |
|---|---|
| Datasheet | MwT-PH7F Download |
| Manufacturer |  CML |
| Description | Medium Power AlGaAs/InGaAs pHEMT |
| Buy | Stock & Price |
FEATURES
:● 24.5 dBm of Power at 18 GHz
● 15 dB typical Small Signal Gain at 18 GHz
● 45% typical PAE at 18 GHz
● 0.25 x 250 Micron Refractory Metal/Gold Gate
● Excellent for High Gain, and High Power Added Efficiency
● Ideal for Commercial, Military, Hi-Rel Space
APPLICATIONS
DESCRIPTION
: Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns 6 to 18 GHz) or narrow-band applications.ELECTRICAL SPECIFICATIONS
: at Ta= 25 °C DC Specifications: at Ta= 25 °C 1 November 2022 MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT 2 November 2022 MwT-PH7F DUAL BIAS MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT MwT-PH7F SELF BIAS Chip and 71 Pkg 70 and 73 Pkg Absolute Maximum Rating Notes: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal. 2. Exceeding any one of these limits may cause permanent damage. 3 November 2022 S-Parameters MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Available Packaging: 70 Package - MwT-P...
