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CR10N60A8K - Silicon N-Channel Power MOSFET

General Description

CR10N60 A8K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 10 A 139 W 0.7 Ω.

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Datasheet Details

Part number CR10N60A8K
Manufacturer CR Micro
File Size 440.79 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CR10N60A8K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CR10N60 A8K General Description： CR10N60 A8K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 10 A 139 W 0.7 Ω Applications： Power switch circuit of adaptor and charger.