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CR12N65A8K - Silicon N-Channel Power MOSFET

General Description

CR12N65 A8K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance.
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 12 A 145 W 0.66 Ω.

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Datasheet Details

Part number CR12N65A8K
Manufacturer CR Micro
File Size 765.94 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CR12N65A8K Datasheet

Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET CR12N65 A8K General Description: CR12N65 A8K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220, which accords with the RoHS standard. Features:  Fast Switching  Low ON Resistance  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 12 A 145 W 0.66 Ω Applications: Power switch circuit of adaptor and charger.